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EnglishThe Sn/Si(111)-(2root3 x 2root3)R30 degrees surface has been reinvestigated with low temperature STM/STS and high resolution core level and valence band photoemission using synchrotron radiation. The experimental evidence indicates a 1.2 ML Sn coverage for this reconstruction, with 14 Sn adatoms per unit cell (only four of which are visible with STM). The surface is semiconducting with a band gap value of 0.8 +/- 0.2 eV. (C) 2004 Elsevier B.V. All rights reserved.
| Titolo: | Structural and electronic properties of the Sn/Si(111)-(2 root 3x2 root 3)R30 degrees surface revised |
| Autori: | |
| Data di pubblicazione: | 2004 |
| Rivista: | |
| Abstract: | The Sn/Si(111)-(2root3 x 2root3)R30 degrees surface has been reinvestigated with low temperature STM/STS and high resolution core level and valence band photoemission using synchrotron radiation. The experimental evidence indicates a 1.2 ML Sn coverage for this reconstruction, with 14 Sn adatoms per unit cell (only four of which are visible with STM). The surface is semiconducting with a band gap value of 0.8 +/- 0.2 eV. (C) 2004 Elsevier B.V. All rights reserved. |
| Handle: | http://hdl.handle.net/11697/10450 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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