Structural and electronic properties of the Sn/Si(111)-(2 root 3x2 root 3)R30 degrees surface revised

Ottaviano, L; Profeta, Gianni; Petaccia, L; Nacci, Cb; Santucci, S.

doi:10.1016/j.susc.2004.02.019

The Sn/Si(111)-(2root3 x 2root3)R30 degrees surface has been reinvestigated with low temperature STM/STS and high resolution core level and valence band photoemission using synchrotron radiation. The experimental evidence indicates a 1.2 ML Sn coverage for this reconstruction, with 14 Sn adatoms per unit cell (only four of which are visible with STM). The surface is semiconducting with a band gap value of 0.8 +/- 0.2 eV. (C) 2004 Elsevier B.V. All rights reserved.

Titolo:	Structural and electronic properties of the Sn/Si(111)-(2 root 3x2 root 3)R30 degrees surface revised
Autori:	OTTAVIANO, LUCA PROFETA, Gianni Petaccia L Nacci CB Santucci S. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2004
Rivista:	SURFACE SCIENCE
Abstract:	The Sn/Si(111)-(2root3 x 2root3)R30 degrees surface has been reinvestigated with low temperature STM/STS and high resolution core level and valence band photoemission using synchrotron radiation. The experimental evidence indicates a 1.2 ML Sn coverage for this reconstruction, with 14 Sn adatoms per unit cell (only four of which are visible with STM). The surface is semiconducting with a band gap value of 0.8 +/- 0.2 eV. (C) 2004 Elsevier B.V. All rights reserved.
Handle:	http://hdl.handle.net/11697/10450
Appare nelle tipologie:	1.1 Articolo in rivista

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