The Sn/Si(111)-(2root3 x 2root3)R30 degrees surface has been reinvestigated with low temperature STM/STS and high resolution core level and valence band photoemission using synchrotron radiation. The experimental evidence indicates a 1.2 ML Sn coverage for this reconstruction, with 14 Sn adatoms per unit cell (only four of which are visible with STM). The surface is semiconducting with a band gap value of 0.8 +/- 0.2 eV. (C) 2004 Elsevier B.V. All rights reserved.
Structural and electronic properties of the Sn/Si(111)-(2 root 3x2 root 3)R30 degrees surface revised
Ottaviano L;PROFETA, Gianni;
2004-01-01
Abstract
The Sn/Si(111)-(2root3 x 2root3)R30 degrees surface has been reinvestigated with low temperature STM/STS and high resolution core level and valence band photoemission using synchrotron radiation. The experimental evidence indicates a 1.2 ML Sn coverage for this reconstruction, with 14 Sn adatoms per unit cell (only four of which are visible with STM). The surface is semiconducting with a band gap value of 0.8 +/- 0.2 eV. (C) 2004 Elsevier B.V. All rights reserved.File in questo prodotto:
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