First-principles full-potential linearized augmented plane wave calculations for the beta -SiC/Ni interface are presented, focused on the effects of different termination,, on the structural and electronic properties We find a strong reactivity of the interface, as confirmed by the high adhesion energies that are larger for the C-terminated junction than for the Si-terminated junction, in agreement with that previously found fur Ti and Al. The metal-induced gap state, are efficiently screened (Angstrom)in b(o)th termination,,, resulting in a decay length of about 1 . The calculated dependence of the Schottky barrie(r) height on different termination,, is not very strong and we investigate the observed differences between Si- and C-terminated junctions in terms of Born effective charges, electronegativity arguments, interface geometries, and screening effects. The agreement with available experimental data is excellent. thus confirming the strong rectifying behavior of this metal/ceramic contact.
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