In this paper we present a 0.25 μm BiCMOS Technology bandpass filter implementation based on a single transistor Active Inductor (AI). The high-Q AI integrated circuit is designed by the use of a single transistor with a compensation network that allows to control both the inductance and its series resistance value. The AIbased high frequency bandpass filter has a center frequency of 2000 MHz (useful for radio and radar applications) and a 3 dB bandwidth of about 6 MHz with a quality factor of about 330. Moreover, a discrete prototype of the same AI has been also designed and measured. Measurements results on the discrete board have shown a 3 dB bandwidth of about 10 MHz, a noise figure of 6 dB, a -10 dBm P1 dB compression point with 80 dB dynamic range. The power supply is 1.2 V with a power consumption of 800 μW showing low-voltage low-power operation capability together with good general performances.
|Titolo:||A low-voltage low-power 0.25 μm integrated single transistor active inductor-based filter|
|Autori interni:||PANTOLI, LEONARDO|
|Data di pubblicazione:||2016|
|Rivista:||ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING|
|Appare nelle tipologie:||1.1 Articolo in rivista|