In this paper a new design scheme simulating a floating inductive behavior at RF frequency is presented. The proposed floating active inductor shows a very high quality factor, high linearity and is suitable for many microwave applications and ICs. The design is a fully symmetrical two-port and reciprocal structure, based on two cascaded pairs of highly linear capacitance gyrators. It shows an inductance value of 370nH at 220MHz with a quality factor greater of 6e4. A prototype board has been fabricated with discrete components and tested with successfully results.

RF active circuit simulating a floating inductance

PANTOLI, LEONARDO;STORNELLI, Vincenzo;LEUZZI, GIORGIO
2015-01-01

Abstract

In this paper a new design scheme simulating a floating inductive behavior at RF frequency is presented. The proposed floating active inductor shows a very high quality factor, high linearity and is suitable for many microwave applications and ICs. The design is a fully symmetrical two-port and reciprocal structure, based on two cascaded pairs of highly linear capacitance gyrators. It shows an inductance value of 370nH at 220MHz with a quality factor greater of 6e4. A prototype board has been fabricated with discrete components and tested with successfully results.
2015
9781467364966
9781467364966
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/106844
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