We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of 65 V μm-1 and field enhancement factor β ∼ 100 at anode-cathode distance of ∼0.6 μm. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.
Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
PASSACANTANDO, MAURIZIO;
2016-01-01
Abstract
We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of 65 V μm-1 and field enhancement factor β ∼ 100 at anode-cathode distance of ∼0.6 μm. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.File | Dimensione | Formato | |
---|---|---|---|
186_nano_27_48_485707.pdf
solo utenti autorizzati
Descrizione: Articolo principale
Tipologia:
Documento in Post-print
Licenza:
Creative commons
Dimensione
1.61 MB
Formato
Adobe PDF
|
1.61 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.