The paper deals with the development of a state-of the-art low noise amplifier with the new 0.1μm high frequency GaAs pHEMT process provided by UMS. The reported amplifier has an ultra low noise of 2.4dB and a gain of 45dB in the frequency band 42GHz-50.2GHz. It has a relatively high linearity with a third-order intercept point of 23dBm and a total power consumption of 250mW. The module is composed by four MMIC connected by micro wires, temperature-depended attenuators, a WG isolator and novel input and output microstrip to waveguide transitions designed in LTCC.
An ultra wideband LNA module for space applications
PANTOLI, LEONARDO;LEUZZI, GIORGIO;
2015-01-01
Abstract
The paper deals with the development of a state-of the-art low noise amplifier with the new 0.1μm high frequency GaAs pHEMT process provided by UMS. The reported amplifier has an ultra low noise of 2.4dB and a gain of 45dB in the frequency band 42GHz-50.2GHz. It has a relatively high linearity with a third-order intercept point of 23dBm and a total power consumption of 250mW. The module is composed by four MMIC connected by micro wires, temperature-depended attenuators, a WG isolator and novel input and output microstrip to waveguide transitions designed in LTCC.File in questo prodotto:
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