The paper deals with the development of a state-of the-art low noise amplifier with the new 0.1μm high frequency GaAs pHEMT process provided by UMS. The reported amplifier has an ultra low noise of 2.4dB and a gain of 45dB in the frequency band 42GHz-50.2GHz. It has a relatively high linearity with a third-order intercept point of 23dBm and a total power consumption of 250mW. The module is composed by four MMIC connected by micro wires, temperature-depended attenuators, a WG isolator and novel input and output microstrip to waveguide transitions designed in LTCC.
|Titolo:||An ultra wideband LNA module for space applications|
|Autori interni:||PANTOLI, LEONARDO|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|