In this paper, a high-Q floating active inductor (FAI), suitable for RF and microwave applications, is presented. The proposed FAI is based on two cascaded pairs of highly linear capacitance gyrators, which provide a symmetric and reciprocal structure. The proposed FAI shows fully symmetrical two-port characteristics, high quality factor and high linearity. As a feasibility demonstration, a prototype of the designed FAI has been fabricated, together with an LC series band-pass filter. At the operating frequency, the real part of the impedance of the equivalent FAI is very low (Req = 0.0039 Ω), providing a very high quality factor. The filter has a central frequency of 430 MHz and a -3 dB bandwidth of about 9 MHz.
RF and microwave high-Q floating active inductor design and implementation
PANTOLI, LEONARDO;STORNELLI, Vincenzo;LEUZZI, GIORGIO
2015-01-01
Abstract
In this paper, a high-Q floating active inductor (FAI), suitable for RF and microwave applications, is presented. The proposed FAI is based on two cascaded pairs of highly linear capacitance gyrators, which provide a symmetric and reciprocal structure. The proposed FAI shows fully symmetrical two-port characteristics, high quality factor and high linearity. As a feasibility demonstration, a prototype of the designed FAI has been fabricated, together with an LC series band-pass filter. At the operating frequency, the real part of the impedance of the equivalent FAI is very low (Req = 0.0039 Ω), providing a very high quality factor. The filter has a central frequency of 430 MHz and a -3 dB bandwidth of about 9 MHz.File | Dimensione | Formato | |
---|---|---|---|
IJCTA_FAI.pdf
solo utenti autorizzati
Tipologia:
Documento in Post-print
Licenza:
Creative commons
Dimensione
1.07 MB
Formato
Adobe PDF
|
1.07 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.