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EnglishWe applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF 2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm 2. Ablation thresholds of 0.06 and 0.1 J/cm 2 and ablation depths of 14 and 20 nm were found for CaF 2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials.
| Titolo: | Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam | |
| Autori: | ||
| Data di pubblicazione: | 2006 | |
| Rivista: | ||
| Abstract: | We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF 2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm 2. Ablation thresholds of 0.06 and 0.1 J/cm 2 and ablation depths of 14 and 20 nm were found for CaF 2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials. | |
| Handle: | http://hdl.handle.net/11697/11472 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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