We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF 2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm 2. Ablation thresholds of 0.06 and 0.1 J/cm 2 and ablation depths of 14 and 20 nm were found for CaF 2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials.

Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam

PALLADINO, Libero
2006-01-01

Abstract

We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF 2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm 2. Ablation thresholds of 0.06 and 0.1 J/cm 2 and ablation depths of 14 and 20 nm were found for CaF 2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/11472
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