We demonstrate room-temperature ferromagnetism in germanium counter-doped with manganese and arsenic at concentrations up to approximately 2.1 × 1020 at/cm3: these values are one order of magnitude lower than those at which ferromagnetic behavior has previously been observed. Synthesis proceeded by ion implantation at 513 K followed by annealing in argon at 673 K. High resolution TEM, STEM, and EDX show single-phase diamond cubic material lacking Mn or As precipitates. These findings are consistent with the prediction of Chen et al. that counter-doping with approximately equal concentrations of a single-electron donor permits Mn, a two-electron acceptor, to be incorporated at high enough concentrations to yield a diluted magnetic semiconductor with a Curie temperature above room temperature.

Room temperature ferromagnetism in low dose ion implanted counter-doped Ge:Mn, As

PASSACANTANDO, MAURIZIO;Ottaviano, L.
2017-01-01

Abstract

We demonstrate room-temperature ferromagnetism in germanium counter-doped with manganese and arsenic at concentrations up to approximately 2.1 × 1020 at/cm3: these values are one order of magnitude lower than those at which ferromagnetic behavior has previously been observed. Synthesis proceeded by ion implantation at 513 K followed by annealing in argon at 673 K. High resolution TEM, STEM, and EDX show single-phase diamond cubic material lacking Mn or As precipitates. These findings are consistent with the prediction of Chen et al. that counter-doping with approximately equal concentrations of a single-electron donor permits Mn, a two-electron acceptor, to be incorporated at high enough concentrations to yield a diluted magnetic semiconductor with a Curie temperature above room temperature.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/118143
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