The Sn/Si(111)-(3Ã3)R30Â° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)]PRLTAO0031-900710.1103/PhysRevLett.98.086401. Â© 2007 The American Physical Society.
|Titolo:||Insulating ground state of Sn/Si(111)-(3Ã3)R30Â°|
OTTAVIANO, LUCA [Membro del Collaboration Group]
|Data di pubblicazione:||2007|
|Appare nelle tipologie:||1.1 Articolo in rivista|