We report the electrical characterization and field emission properties of MoS 2 bilayers deposited on a SiO 2 / Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS 2 and we report normally-on field-effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~ 200 V / μ m is able to extract current from the flat part of MoS 2 bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations. We show that a Fowler-Nordheim model, modified to account for electron confinement in two-dimensional (2D) materials, fully describes the emission process.

Transport and Field Emission Properties of MoS₂ Bilayers

Passacantando, Maurizio;
2018

Abstract

We report the electrical characterization and field emission properties of MoS 2 bilayers deposited on a SiO 2 / Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS 2 and we report normally-on field-effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~ 200 V / μ m is able to extract current from the flat part of MoS 2 bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations. We show that a Fowler-Nordheim model, modified to account for electron confinement in two-dimensional (2D) materials, fully describes the emission process.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/122966
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