We report a facile approach based on piezoelectric-driven nanotips inside a scanning electron microscope to contact and electrically characterize ultrathin MoS2 (molybdenum disulfide) flakes on a SiO2/Si (silicon dioxide/silicon) substrate. We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS2, used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. We observe that the conduction of the MoS2 channel is affected by trap states. Moreover, we report a gate-controlled field emission current from the edge part of the MoS2 flake, evidencing a field enhancement factor of approximately 200 and a turn-on field of approximately 40 V/µm at a cathode–anode separation distance of 900 nm.

Nanotip contacts for electric transport and field emission characterization of ultrathin mos2 flakes

Passacantando M.;
2020

Abstract

We report a facile approach based on piezoelectric-driven nanotips inside a scanning electron microscope to contact and electrically characterize ultrathin MoS2 (molybdenum disulfide) flakes on a SiO2/Si (silicon dioxide/silicon) substrate. We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS2, used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. We observe that the conduction of the MoS2 channel is affected by trap states. Moreover, we report a gate-controlled field emission current from the edge part of the MoS2 flake, evidencing a field enhancement factor of approximately 200 and a turn-on field of approximately 40 V/µm at a cathode–anode separation distance of 900 nm.
File in questo prodotto:
File Dimensione Formato  
217_nanomaterials-10-00106.pdf

accesso aperto

Descrizione: Articolo principale
Tipologia: Documento in Post-print
Licenza: Creative commons
Dimensione 1.44 MB
Formato Adobe PDF
1.44 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/148050
Citazioni
  • ???jsp.display-item.citation.pmc??? 2
  • Scopus 14
  • ???jsp.display-item.citation.isi??? 15
social impact