High resolution X-ray photoelectron spectroscopy measurements have been performed onto ultrathin films of hexadecafluoro copper phthalocyanine deposited, at room temperature and in ultrahigh vacuum conditions, onto clean Si(1 1 1)7 x 7 substrate (silicon. Si). The measurements, performed at various film thicknesses, show a strong interaction between the molecule and the Si substrate. All the core level peaks present strong modifications induced by the substrate interaction. In particular the fluorine (F) spectrum clearly presents the effect of the interaction of some F atoms of the molecule with the substrate, which determines the formation of F-Si bonds while the copper spectrum indicates a charge transfer from the Si substrate. The changes observed in the other core level spectra have been attributed to a different charge distribution in the molecule. after the formation of F-Si bonds. We suggest a planar growth of these molecules on the Si substrate starting from the first layer. (C) 2001 Elsevier Science B.V. All rights reserved.

High resolution XPS studies on Hexadecafluoro-Copper-Phthalocyanine deposited onto Si(111)7x7 surface

LOZZI, Luca;OTTAVIANO, LUCA;
2001-01-01

Abstract

High resolution X-ray photoelectron spectroscopy measurements have been performed onto ultrathin films of hexadecafluoro copper phthalocyanine deposited, at room temperature and in ultrahigh vacuum conditions, onto clean Si(1 1 1)7 x 7 substrate (silicon. Si). The measurements, performed at various film thicknesses, show a strong interaction between the molecule and the Si substrate. All the core level peaks present strong modifications induced by the substrate interaction. In particular the fluorine (F) spectrum clearly presents the effect of the interaction of some F atoms of the molecule with the substrate, which determines the formation of F-Si bonds while the copper spectrum indicates a charge transfer from the Si substrate. The changes observed in the other core level spectra have been attributed to a different charge distribution in the molecule. after the formation of F-Si bonds. We suggest a planar growth of these molecules on the Si substrate starting from the first layer. (C) 2001 Elsevier Science B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/14814
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