In this work we present the design of a GaAs monolithic active filter. It is based on a 0.13 μm pHMET technology process provided by HSRI and it has been conceived for RF practical applications, being defined by typical specifications of modern wireless communication systems. The design is based on the use of active inductors in place of spiral inductors, significantly improving the overall performance of the filter. Each active inductor makes use of only one active device slightly affecting the overall power consumption. The filter has been optimised for operating in the bandwidth (1800–2100 MHz) with a 3 dB bandwidth of 30 MHz and a very high slope factor. The 1 dB compression point is − 8 dBm and it is obtained with a DC power consumption of 120 mW.

On-chip active filter in GaAs technology for wireless communication systems

Pantoli L.;Stornelli V.;Leuzzi G.;Li H.;
2018-01-01

Abstract

In this work we present the design of a GaAs monolithic active filter. It is based on a 0.13 μm pHMET technology process provided by HSRI and it has been conceived for RF practical applications, being defined by typical specifications of modern wireless communication systems. The design is based on the use of active inductors in place of spiral inductors, significantly improving the overall performance of the filter. Each active inductor makes use of only one active device slightly affecting the overall power consumption. The filter has been optimised for operating in the bandwidth (1800–2100 MHz) with a 3 dB bandwidth of 30 MHz and a very high slope factor. The 1 dB compression point is − 8 dBm and it is obtained with a DC power consumption of 120 mW.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/148350
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