In this work the design method and comparative results of sub-THz tunable voltage sources are reported. Different architectures are considered showing the best performance architectures and more reliable approaches for the realization of voltage-controlled oscillators (VCOs) with integrated technology. The considered scenario is the realization of a signal source for THz camera and imaging applications. The preferred technology adopted in this work has been the 130 nm SiGe heterojunction-bipolar-transistor process provided by IHP foundry. The SG13G2 has a cut-off frequency (fT ) of 300 GHz and a maximum oscillation frequency (fmax ) of 450 GHz. The solutions here proposed achieve high output power levels, very good Phase Noise performance, wide tunability and compact dimensions.

SiGe Sub-THz VCOs design approach for imaging applications

Pantoli L.;Bello H.;Leuzzi G.;
2020

Abstract

In this work the design method and comparative results of sub-THz tunable voltage sources are reported. Different architectures are considered showing the best performance architectures and more reliable approaches for the realization of voltage-controlled oscillators (VCOs) with integrated technology. The considered scenario is the realization of a signal source for THz camera and imaging applications. The preferred technology adopted in this work has been the 130 nm SiGe heterojunction-bipolar-transistor process provided by IHP foundry. The SG13G2 has a cut-off frequency (fT ) of 300 GHz and a maximum oscillation frequency (fmax ) of 450 GHz. The solutions here proposed achieve high output power levels, very good Phase Noise performance, wide tunability and compact dimensions.
978-1-7281-2645-6
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/150407
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