The introduction of a compact switching architecture in the design of a monolithic microwave integrated voltage-controlled oscillator (VCO) is described, that is able to provide enhanced characteristics in term of both linearity and tunability. The proposed solution is applied to the design of a C-band GaAs MMIC (monolithic microwave integrated circuit) VCO. The chip has been realised with the heterojunction bipolar transistor (HBT) HB20M technology process provided by UMS Foundry. Measurements show a relative tuning range of about 30%, an average sensitivity of about 83 MHz/V, a minimum output power of 11.4 dBm and a phase noise at 100 kHz of frequency offset from the carrier lower of −107 dBc/Hz.
|Titolo:||Enhancing performance of a InGaP/GaAs VCO by means of a switching architecture|
|Data di pubblicazione:||2018|
|Appare nelle tipologie:||1.1 Articolo in rivista|