This paper presents the final test results of the Low-Noise Amplifier (LNA) module developed in Thales under a contract with the European Space Agency (ESA) operating in the frequency range 47.2 to 51.6 GHz. The LNA, featuring an unsurpassed noise figure of less than 2.8dB all over the band, is a complete Engineering Model (EM), ready to be employed as a front-end in advanced Q/V band payload on board of modern High Throughput Satellites (HTS). It provides 45 dB of gain automatically compensated in temperature (range -30 to +65 °C) and high linearity, performing a third order intercept point (IP3) of 24dBm with a power consumption of 870 mW. All the MMICs composing the line-up have been fabricated in Europe by using the recently space qualified process 0.1μm GaAs PHEMT provided by UMS.

V-band low-noise amplifier module for high throughput satellite applications

Pantoli L.;Leuzzi G.;
2018

Abstract

This paper presents the final test results of the Low-Noise Amplifier (LNA) module developed in Thales under a contract with the European Space Agency (ESA) operating in the frequency range 47.2 to 51.6 GHz. The LNA, featuring an unsurpassed noise figure of less than 2.8dB all over the band, is a complete Engineering Model (EM), ready to be employed as a front-end in advanced Q/V band payload on board of modern High Throughput Satellites (HTS). It provides 45 dB of gain automatically compensated in temperature (range -30 to +65 °C) and high linearity, performing a third order intercept point (IP3) of 24dBm with a power consumption of 870 mW. All the MMICs composing the line-up have been fabricated in Europe by using the recently space qualified process 0.1μm GaAs PHEMT provided by UMS.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/150436
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