A new low-voltage low-power class-AB second generation voltage conveyor (VCII) is presented. The proposed circuit is based on an improved class-AB flipped voltage follower (FVF) designed by adding a simple negative feedback loop to the conventional class-AB circuit. This modification ensures high current drive capability of at least 2 mA for both falling and rising edges of input signal along with very low 2-mΩ output impedance and high accuracy. Benefiting from the new class-AB FVF, the proposed VCII features a very simple implementation, extremely low impedance at Y and Z terminals (2 mΩ), high impedance at X terminal (370 kΩ) and high accuracy in current and voltage conveying (99% and 98%, respectively). Moreover, it exhibits current drive capability 117.6 times larger than its bias current (17μA ). The circuit occupies 381.5μm× 19μm area. The application of the proposed VCII as a voltage integrator is also presented. Simulation results using PSpice and 0.35-μm CMOS technology with ±1.65-V supply voltage are provided to demonstrate the presented theory. A comparison with the literature is also provided.

A New High Drive Class-AB FVF-Based Second Generation Voltage Conveyor

Barile G.;Ferri G.;Safari L.;Stornelli V.
2020

Abstract

A new low-voltage low-power class-AB second generation voltage conveyor (VCII) is presented. The proposed circuit is based on an improved class-AB flipped voltage follower (FVF) designed by adding a simple negative feedback loop to the conventional class-AB circuit. This modification ensures high current drive capability of at least 2 mA for both falling and rising edges of input signal along with very low 2-mΩ output impedance and high accuracy. Benefiting from the new class-AB FVF, the proposed VCII features a very simple implementation, extremely low impedance at Y and Z terminals (2 mΩ), high impedance at X terminal (370 kΩ) and high accuracy in current and voltage conveying (99% and 98%, respectively). Moreover, it exhibits current drive capability 117.6 times larger than its bias current (17μA ). The circuit occupies 381.5μm× 19μm area. The application of the proposed VCII as a voltage integrator is also presented. Simulation results using PSpice and 0.35-μm CMOS technology with ±1.65-V supply voltage are provided to demonstrate the presented theory. A comparison with the literature is also provided.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/153059
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