AgGaS2 is a technologically important semiconductor for its large birefringence coefficient. In this work we compare the theoretical ab-initio all-electron FLAPW results with very refined experimental data obtained with accurate X-ray analysis. In particular we focus our attention to the electronic distribution along the significative bonding directions connecting the three different atoms. Furthermore, the charge density contours around Ag provide a clear evidence of the contribution of its d orbitals to the chemical bond.
A Theoretical and Experimental Study of the Chemical Bonding in AgGaS2
CONTINENZA, Alessandra;
1996-01-01
Abstract
AgGaS2 is a technologically important semiconductor for its large birefringence coefficient. In this work we compare the theoretical ab-initio all-electron FLAPW results with very refined experimental data obtained with accurate X-ray analysis. In particular we focus our attention to the electronic distribution along the significative bonding directions connecting the three different atoms. Furthermore, the charge density contours around Ag provide a clear evidence of the contribution of its d orbitals to the chemical bond.File in questo prodotto:
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