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EnglishThe surface stoichiometry of SiO(x) thin films (x = 1,...,2) has been determined by means of x-ray photoelectron spectroscopy using: (a) two well established methods involving the determination of the area of the O 1s and Si 2p core level peaks and the analysis of the Si 2p line shape, respectively, and (b) the method of the modified Auger parameter recently suggested. The agreement between the different approaches for determination of the stoichiometry of the films indicates the modified Auger parameter procedure as an easy, fast and very reliable method to ascertain the surface stoichiometry of SiO(x) films.
http://hdl.handle.net/11697/15602| Titolo: | SIOX SURFACE STOICHIOMETRY BY XPS - A COMPARISON OF VARIOUS METHODS |
| Autori interni: | LOZZI, Luca PASSACANTANDO, MAURIZIO |
| Data di pubblicazione: | 1994 |
| Rivista: | SURFACE AND INTERFACE ANALYSIS |
| Abstract: | The surface stoichiometry of SiO(x) thin films (x = 1,...,2) has been determined by means of x-ray photoelectron spectroscopy using: (a) two well established methods involving the determination of the area of the O 1s and Si 2p core level peaks and the analysis of the Si 2p line shape, respectively, and (b) the method of the modified Auger parameter recently suggested. The agreement between the different approaches for determination of the stoichiometry of the films indicates the modified Auger parameter procedure as an easy, fast and very reliable method to ascertain the surface stoichiometry of SiO(x) films. |
| Handle: | http://hdl.handle.net/11697/15602 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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