The surface stoichiometry of SiO(x) thin films (x = 1-2) has been studied by means of X-ray photoelectron spectroscopy. The presence of three Si oxidation states (SiO2, SiO, Si2O3) has been observed through an analysis of the Si2p line shape and the intensity variation of these different silicon oxide signals, as a function of the oxygen content, has been followed. The calculated stoichiometry has been compared with that obtained using the modified Auger parameter method. The good agreement between these results supports the validity of the modified Auger parameter as an easy and fast method to know the surface stoichiometry of SiO(x) films.

XPS STUDIES ON SIOX THIN-FILMS

LOZZI, Luca;PASSACANTANDO, MAURIZIO;
1993

Abstract

The surface stoichiometry of SiO(x) thin films (x = 1-2) has been studied by means of X-ray photoelectron spectroscopy. The presence of three Si oxidation states (SiO2, SiO, Si2O3) has been observed through an analysis of the Si2p line shape and the intensity variation of these different silicon oxide signals, as a function of the oxygen content, has been followed. The calculated stoichiometry has been compared with that obtained using the modified Auger parameter method. The good agreement between these results supports the validity of the modified Auger parameter as an easy and fast method to know the surface stoichiometry of SiO(x) films.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/15605
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