The effect of a hexagonal boron nitride (hBN) layer closely aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, θhBNâ‰2â, the graphene electronic structure is strongly disturbed. The width of the low-energy peak in the density of states changes from W∼5-10 meV for a decoupled system to ∼20-30 meV. Spikes in the density of states due to van Hove singularities are smoothed out. We find that for a realistic combination of the twist angle in the TBG and the twist angle between the hBN and the graphene layer the system can be described using a single moiré unit cell.

Band structure of twisted bilayer graphene on hexagonal boron nitride

Cea T;
2020

Abstract

The effect of a hexagonal boron nitride (hBN) layer closely aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, θhBNâ‰2â, the graphene electronic structure is strongly disturbed. The width of the low-energy peak in the density of states changes from W∼5-10 meV for a decoupled system to ∼20-30 meV. Spikes in the density of states due to van Hove singularities are smoothed out. We find that for a realistic combination of the twist angle in the TBG and the twist angle between the hBN and the graphene layer the system can be described using a single moiré unit cell.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/190523
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