In terahertz (THz) photodetection, the efficient interaction between light and matter is crucial for enhancing material properties in nonequilibrium states. This work introduces an innovative approach using spiral plasmonic architectures to effectively control inversion-symmetry coupling, promoting the operational efficiency of light-induced hot-carrier effects in the THz band. The strategic design of the spiral structures, focusing on chirality and symmetry, enables the successful manipulation of a self-driven photocurrent, adapting its direction and magnitude as needed. This design facilitates the improvement of THz detectors in terms of sensitivity and responsiveness. Additionally, the integration of asymmetric metallization and black phosphorus in the detectors has achieved noteworthy performance metrics, such as a maximum responsivity of 70.2 V W−1 at 0.30 THz, a fast response time below 6 µs, and a noise-equivalent power lower than 1.95 × 10−10 W Hz−1/2. Harnessing the potential of light-induced hot carrier effects and advanced band-structure engineering, this research offers a pragmatic approach for the development of high-efficiency THz photodetectors, opening new avenues for applications like remote sensing and rapid imaging. © 2024 Wiley-VCH GmbH.

Plasmonic Architectures Boosting Performance in Terahertz Photodetectors

Politano, A.
Writing – Original Draft Preparation
;
2024-01-01

Abstract

In terahertz (THz) photodetection, the efficient interaction between light and matter is crucial for enhancing material properties in nonequilibrium states. This work introduces an innovative approach using spiral plasmonic architectures to effectively control inversion-symmetry coupling, promoting the operational efficiency of light-induced hot-carrier effects in the THz band. The strategic design of the spiral structures, focusing on chirality and symmetry, enables the successful manipulation of a self-driven photocurrent, adapting its direction and magnitude as needed. This design facilitates the improvement of THz detectors in terms of sensitivity and responsiveness. Additionally, the integration of asymmetric metallization and black phosphorus in the detectors has achieved noteworthy performance metrics, such as a maximum responsivity of 70.2 V W−1 at 0.30 THz, a fast response time below 6 µs, and a noise-equivalent power lower than 1.95 × 10−10 W Hz−1/2. Harnessing the potential of light-induced hot carrier effects and advanced band-structure engineering, this research offers a pragmatic approach for the development of high-efficiency THz photodetectors, opening new avenues for applications like remote sensing and rapid imaging. © 2024 Wiley-VCH GmbH.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/229101
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