Multiwalled WS nanotubes on interdigitated electrodes for visible-light photodetectors

One-dimensional semiconductors have emerged as a promising avenue for various electronic and optoelectronic applications due to their remarkable electrical and optical characteristics. Among them, the utilization of thin films composed of randomly oriented multiwalled tungsten disulfide (WS2) nanotubes (NTs) has garnered significant attention. The unique structural properties of WS2 nanotubes, along with their inherent semiconducting nature and relatively small bandgap, make them an ideal candidate for photodetection in the visible-light spectrum. Indeed, the interdigitated photodetector based on WS2 nanotubes exhibits exceptional sensitivity to visible light. The nanotube small bandgap and unique surface-to-volume ratio enable efficient light absorption and charge generation upon photon absorption. This leads to a high signal-to-noise ratio and enhanced sensitivity, enabling the detection even at a low intensity of 10%. In this work, we demonstrate the potential of utilizing randomly oriented multiwalled WS2 nanotubes as the active material in interdigitated photodetectors. The combination of their excellent electrical and optical properties, fast response time, and high sensitivity make them an appealing choice for visible-light detection.