Mechanically exfoliated two-dimensional α-In2 Se3 flakes are used as the channel material in field effect transistors. N-type conduction with ∼ 0.1(cm2)/Vs carrier mobility is reported. The good gate modulation and the pronounced hysteresis make the device suitable for a wide range of applications, from digital logics to memories. An order of magnitude current increase is observed under illumination by a blue light at the incident power of 24 nW. The devices can work as visible-to-infrared wide-band photodetectors with time response of few-hundred milliseconds, responsivity up to 40 A/W and specific detectivity D∗=5· 1011 Jones at low light intensity.
Optoelectronic properties of two-dimensional α-In2Se3 Field Effect Transistor
Passacantando M.;
2023-01-01
Abstract
Mechanically exfoliated two-dimensional α-In2 Se3 flakes are used as the channel material in field effect transistors. N-type conduction with ∼ 0.1(cm2)/Vs carrier mobility is reported. The good gate modulation and the pronounced hysteresis make the device suitable for a wide range of applications, from digital logics to memories. An order of magnitude current increase is observed under illumination by a blue light at the incident power of 24 nW. The devices can work as visible-to-infrared wide-band photodetectors with time response of few-hundred milliseconds, responsivity up to 40 A/W and specific detectivity D∗=5· 1011 Jones at low light intensity.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
