We report the realization of a novel photodetector in which the photocurrent behavior changes accordingly to the position of the light spot above the substrate. Using the dry transfer printing method, a Single Walled Carbon Nanotubes (SWCNTs) film has been deposited on top of a properly modified n-type silicon substrate. A small portion of the silicon substrate (covered by a nominal 140 nm layer of Si3N4) was etched with hydrofluoric acid to expose the pure n-type silicon. In this way, the deposition of the nanotubes above all the substrate allows the formation of two different junctions within the same device: one with an insulating interlayer and one without. The presence of these two junctions allows the device to show different photocurrent behavior depending on the position of the light spot.
SWCNT-Si photodetector with position-dependent photoresponse
Lozzi L.;Passacantando M.
2023-01-01
Abstract
We report the realization of a novel photodetector in which the photocurrent behavior changes accordingly to the position of the light spot above the substrate. Using the dry transfer printing method, a Single Walled Carbon Nanotubes (SWCNTs) film has been deposited on top of a properly modified n-type silicon substrate. A small portion of the silicon substrate (covered by a nominal 140 nm layer of Si3N4) was etched with hydrofluoric acid to expose the pure n-type silicon. In this way, the deposition of the nanotubes above all the substrate allows the formation of two different junctions within the same device: one with an insulating interlayer and one without. The presence of these two junctions allows the device to show different photocurrent behavior depending on the position of the light spot.Pubblicazioni consigliate
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