The process of fabricating a silicon junction with a low-dimensional material often requires the development of a parallel metal-insulator-semiconductor (MIS) structure. Although generally overlooked, this MIS structure plays a crucial role in determining the optoelectronic properties of the device. This study focuses on two different devices based on graphene (Gr-device) and carbon nanotubes (CNT-device) that leverage a thin silicon nitride (Si3N4) layer to create a parallel MIS structure. This enables the devices to exhibit new optoelectronic features and enhanced photoconduction capabilities.
Enhanced photodetection in carbon-based devices with MIS parallel structure
Faella E.;Passacantando M.;
2023-01-01
Abstract
The process of fabricating a silicon junction with a low-dimensional material often requires the development of a parallel metal-insulator-semiconductor (MIS) structure. Although generally overlooked, this MIS structure plays a crucial role in determining the optoelectronic properties of the device. This study focuses on two different devices based on graphene (Gr-device) and carbon nanotubes (CNT-device) that leverage a thin silicon nitride (Si3N4) layer to create a parallel MIS structure. This enables the devices to exhibit new optoelectronic features and enhanced photoconduction capabilities.File in questo prodotto:
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