The surface stoichiometry of SiOxNy thin films has been studied by means of x-ray photoelectron spectroscopy (XPS). The modified Auger parameter, applied on the Si 2p core level and Si KL2,3L2,3 Auger signal, has been used to calculate the surface composition of SiOxNy thin films prepared using different methods. The results have been compared with those obtained calculating the area under the XPS peaks and the Rutherford backscattering spectroscopy. The good agreement between these data indicates the validity of the modified Auger parameter as an easy and fast method, available in all electron spectroscopy laboratory, to study the surface stoichiometry of Si-based compounds.
SURFACE STOICHIOMETRY DETERMINATION OF SIOXNY THIN-FILMS BY MEANS OF XPS
LOZZI, Luca;PASSACANTANDO, MAURIZIO;
1994-01-01
Abstract
The surface stoichiometry of SiOxNy thin films has been studied by means of x-ray photoelectron spectroscopy (XPS). The modified Auger parameter, applied on the Si 2p core level and Si KL2,3L2,3 Auger signal, has been used to calculate the surface composition of SiOxNy thin films prepared using different methods. The results have been compared with those obtained calculating the area under the XPS peaks and the Rutherford backscattering spectroscopy. The good agreement between these data indicates the validity of the modified Auger parameter as an easy and fast method, available in all electron spectroscopy laboratory, to study the surface stoichiometry of Si-based compounds.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
