The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi. RI Margaritondo, Giorgio/B-1367-2008
Titolo: | BICASRCUO-SEMICONDUCTOR INTERFACE FORMATION PROCESSES |
Autori: | |
Data di pubblicazione: | 1991 |
Rivista: | |
Abstract: | The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi. RI Margaritondo, Giorgio/B-1367-2008 |
Handle: | http://hdl.handle.net/11697/3322 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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