The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi. RI Margaritondo, Giorgio/B-1367-2008

BICASRCUO-SEMICONDUCTOR INTERFACE FORMATION PROCESSES

LOZZI, Luca;
1991

Abstract

The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi. RI Margaritondo, Giorgio/B-1367-2008
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/3322
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