The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi. RI Margaritondo, Giorgio/B-1367-2008
BICASRCUO-SEMICONDUCTOR INTERFACE FORMATION PROCESSES
LOZZI, Luca;
1991-01-01
Abstract
The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi. RI Margaritondo, Giorgio/B-1367-2008File in questo prodotto:
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