Silicon suboxides thin films obtained by sol-gel and dip-coating methods, starting from a sol containing different percentages of TEOS (tetraethoxysilane) and MTEOS (methyltriethoxysilane), were grown onto silicon substrates. The samples were annealed at 100, 300, and 500 degrees C, and the electronic and compositional properties of the surface were studied by x-ray photoelectron spectroscopy (XPS) detecting the Si ''Auger parameter'' and the valence band. The effects produced by an ion-sputtering treatment of the samples were also studied.
X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method
PASSACANTANDO, MAURIZIO;LOZZI, Luca;SANTUCCI, Sandro
1997-01-01
Abstract
Silicon suboxides thin films obtained by sol-gel and dip-coating methods, starting from a sol containing different percentages of TEOS (tetraethoxysilane) and MTEOS (methyltriethoxysilane), were grown onto silicon substrates. The samples were annealed at 100, 300, and 500 degrees C, and the electronic and compositional properties of the surface were studied by x-ray photoelectron spectroscopy (XPS) detecting the Si ''Auger parameter'' and the valence band. The effects produced by an ion-sputtering treatment of the samples were also studied.File in questo prodotto:
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