In this work we show the adsorption of acetonitrile (CH3CN) and acrylonitrile (CH2CHCN) on Si(0 0 1)-2 x 1 at room temperature by increasing the molecular doses. Especially, by means of XPS and LEED data, we stress the action of these molecules on the silicon surface locating the dangling-bonds quasi-saturation within 10 L. The shortage of nitrogen XPS signal and some anomalies in carbon spectra point to an invading action from a traditional X-ray source (Al-K-alpha line) against chemisorbed molecules. In particular, we think that a long exposure to this radiation could break carbon-silicon bonds changing some adsorption geometries and making desorb molecular fragments. (C) 2003 Elsevier B.V. All rights reserved.
RT growth of acetonitrile and acrylonitrile on Si(001)-2 x 1 studied by XPS and LEED
LOZZI, Luca;
2003-01-01
Abstract
In this work we show the adsorption of acetonitrile (CH3CN) and acrylonitrile (CH2CHCN) on Si(0 0 1)-2 x 1 at room temperature by increasing the molecular doses. Especially, by means of XPS and LEED data, we stress the action of these molecules on the silicon surface locating the dangling-bonds quasi-saturation within 10 L. The shortage of nitrogen XPS signal and some anomalies in carbon spectra point to an invading action from a traditional X-ray source (Al-K-alpha line) against chemisorbed molecules. In particular, we think that a long exposure to this radiation could break carbon-silicon bonds changing some adsorption geometries and making desorb molecular fragments. (C) 2003 Elsevier B.V. All rights reserved.Pubblicazioni consigliate
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