We have studied the short range order around Cr atoms deposited on Si(111) surface by means of the surface electron energy loss fine structure (SEELFS) technique above the L2,3 edges of chromium. The weak oscillations superimposed on the high energy side of the edges have been analyzed using the extended X-ray absorption fine structure (EXAFS) formula. Different evaporations of very clean chromium films have been analyzed. The radial distribution function indicates the formation of a Cr/Si interface for very thin deposits (equivalent thicknesses of about 3 and 5 angstrom) of chromium. We have found that the first nearest neighbour distance Cr-Si is 2.46 +/- 0.05 angstrom supporting the formation of a CrSi2 interface at room temperature.

STRUCTURAL INVESTIGATION OF THE CR/SI INTERFACE

PASSACANTANDO, MAURIZIO;LOZZI L;SANTUCCI, Sandro
1991-01-01

Abstract

We have studied the short range order around Cr atoms deposited on Si(111) surface by means of the surface electron energy loss fine structure (SEELFS) technique above the L2,3 edges of chromium. The weak oscillations superimposed on the high energy side of the edges have been analyzed using the extended X-ray absorption fine structure (EXAFS) formula. Different evaporations of very clean chromium films have been analyzed. The radial distribution function indicates the formation of a Cr/Si interface for very thin deposits (equivalent thicknesses of about 3 and 5 angstrom) of chromium. We have found that the first nearest neighbour distance Cr-Si is 2.46 +/- 0.05 angstrom supporting the formation of a CrSi2 interface at room temperature.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/15609
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