Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn–Ge alloy

Ottaviano, Luca; Parisse, P; Passacantando, Maurizio; Picozzi, S; Verna, A; Impellizzeri, G; Priolo, F.

doi:10.1016/j.susc.2006.07.042

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Electron energy loss spectroscopy maps using a transmission electron microscope were used to investigate with nanometer spatial resolution the Mn distribution of a MnxGe1-x ion implanted alloy (x similar or equal to 4%). Mn is fully diluted in the Ge matrix in a subsurface implanted layer, showing concentration inhomogeneities at the nm scale. In the deep implanted layers the presence of Mn rich clusters-either amorphous or in the Mn5Ge3 phase-is directly evidenced. Scanning Tunneling Microscopy/Spectroscopy directly shows that the Mn5Ge3 clusters are metallic, while those smaller and amorphous are semiconducting with 0.45 +/- 0.05 eV band gap. The Ge matrix with Mn dilution is semiconducting with 0.60 +/- 0.05 eV gap. Electronic structure results are compared with ab-initio calculations. (c) 2006 Elsevier B.V. All rights reserved.

Titolo:	Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn–Ge alloy
Autori:	OTTAVIANO, LUCA Parisse P PASSACANTANDO, MAURIZIO Picozzi S Verna A Impellizzeri G Priolo F. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2006
Rivista:	SURFACE SCIENCE
Abstract:	Electron energy loss spectroscopy maps using a transmission electron microscope were used to investigate with nanometer spatial resolution the Mn distribution of a MnxGe1-x ion implanted alloy (x similar or equal to 4%). Mn is fully diluted in the Ge matrix in a subsurface implanted layer, showing concentration inhomogeneities at the nm scale. In the deep implanted layers the presence of Mn rich clusters-either amorphous or in the Mn5Ge3 phase-is directly evidenced. Scanning Tunneling Microscopy/Spectroscopy directly shows that the Mn5Ge3 clusters are metallic, while those smaller and amorphous are semiconducting with 0.45 +/- 0.05 eV band gap. The Ge matrix with Mn dilution is semiconducting with 0.60 +/- 0.05 eV gap. Electronic structure results are compared with ab-initio calculations. (c) 2006 Elsevier B.V. All rights reserved.
Handle:	http://hdl.handle.net/11697/5047
Appare nelle tipologie:	1.1 Articolo in rivista

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