CINECA IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishElectron energy loss spectroscopy maps using a transmission electron microscope were used to investigate with nanometer spatial resolution the Mn distribution of a MnxGe1-x ion implanted alloy (x similar or equal to 4%). Mn is fully diluted in the Ge matrix in a subsurface implanted layer, showing concentration inhomogeneities at the nm scale. In the deep implanted layers the presence of Mn rich clusters-either amorphous or in the Mn5Ge3 phase-is directly evidenced. Scanning Tunneling Microscopy/Spectroscopy directly shows that the Mn5Ge3 clusters are metallic, while those smaller and amorphous are semiconducting with 0.45 +/- 0.05 eV band gap. The Ge matrix with Mn dilution is semiconducting with 0.60 +/- 0.05 eV gap. Electronic structure results are compared with ab-initio calculations. (c) 2006 Elsevier B.V. All rights reserved.
| Titolo: | Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn–Ge alloy |
| Autori: | |
| Data di pubblicazione: | 2006 |
| Rivista: | |
| Abstract: | Electron energy loss spectroscopy maps using a transmission electron microscope were used to investigate with nanometer spatial resolution the Mn distribution of a MnxGe1-x ion implanted alloy (x similar or equal to 4%). Mn is fully diluted in the Ge matrix in a subsurface implanted layer, showing concentration inhomogeneities at the nm scale. In the deep implanted layers the presence of Mn rich clusters-either amorphous or in the Mn5Ge3 phase-is directly evidenced. Scanning Tunneling Microscopy/Spectroscopy directly shows that the Mn5Ge3 clusters are metallic, while those smaller and amorphous are semiconducting with 0.45 +/- 0.05 eV band gap. The Ge matrix with Mn dilution is semiconducting with 0.60 +/- 0.05 eV gap. Electronic structure results are compared with ab-initio calculations. (c) 2006 Elsevier B.V. All rights reserved. |
| Handle: | http://hdl.handle.net/11697/5047 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11697/5047
Copyright © 2020