MoO3, WO3 single and Mo/W binary compounds at different Mo/W atomic percentages were deposited by sol-gel spin coating technique on Si/Si3N4 substrates provided with Pt interdigital electrodes and annealed at 450degreesC for 1 h. Films were characterized by SEM, grazing incidence XRD and XPS techniques. Electrical responses to different gases were obtained by exposing the films to 30 ppm CO and 1 ppm NO2. Increasing the Mo/W content the selectivity to NO2 is enhanced. Gas responses resulted to be influenced by the Mo/W weight ratio, films morphology and amount of crystalline phases. RI li , yongxiang/C-5059-2009
MoO3, WO3 single and binary oxide prepared by sol-gel method for gas sensing applications
CANTALINI, Carlo;PASSACANTANDO, MAURIZIO;SANTUCCI, Sandro
2003-01-01
Abstract
MoO3, WO3 single and Mo/W binary compounds at different Mo/W atomic percentages were deposited by sol-gel spin coating technique on Si/Si3N4 substrates provided with Pt interdigital electrodes and annealed at 450degreesC for 1 h. Films were characterized by SEM, grazing incidence XRD and XPS techniques. Electrical responses to different gases were obtained by exposing the films to 30 ppm CO and 1 ppm NO2. Increasing the Mo/W content the selectivity to NO2 is enhanced. Gas responses resulted to be influenced by the Mo/W weight ratio, films morphology and amount of crystalline phases. RI li , yongxiang/C-5059-2009File in questo prodotto:
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