The effect of ion-implanted manganese impurities in germanium is investigated by means of the Kerr effect rotation. annealing, a magnetic cycle with a coercive field 3000 Oe is observed at about 10 K. The hysteresis disappears just, below room temperature. The magnetic analysis, supported by structural characterization, suggests that particles rich in Mn are formed within the Ge matrix during implantation.
Magnetooptical study of Mn ions implanted in Ge
D'ORAZIO, FRANCO;PASSACANTANDO, MAURIZIO;SANTUCCI, Sandro;
2002-01-01
Abstract
The effect of ion-implanted manganese impurities in germanium is investigated by means of the Kerr effect rotation. annealing, a magnetic cycle with a coercive field 3000 Oe is observed at about 10 K. The hysteresis disappears just, below room temperature. The magnetic analysis, supported by structural characterization, suggests that particles rich in Mn are formed within the Ge matrix during implantation.File in questo prodotto:
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