The electronic structure of amorphous carbon nitride (a-C:H:N) thin films prepared by radiofrequency (rf) plasma decomposition of CH4/N2 mixture was determined by soft x-ray photoe1ectron spectroscopy by the mean of synchrotron radiation source. On increasing N2 fraction, the valence band shows profound changes. The new features are identified by a comparison of the experimental spectra with theoretically weighted density of the states of graphite and C3N4 structures.
Study of Different Phases in a-C:H:N Thin Films Deposited by Plasma- Enhanced Chemical Vapour Deposition: A comparision Between Theoretical and Experimental Data
CONTINENZA, Alessandra;Lozzi L;
2001-01-01
Abstract
The electronic structure of amorphous carbon nitride (a-C:H:N) thin films prepared by radiofrequency (rf) plasma decomposition of CH4/N2 mixture was determined by soft x-ray photoe1ectron spectroscopy by the mean of synchrotron radiation source. On increasing N2 fraction, the valence band shows profound changes. The new features are identified by a comparison of the experimental spectra with theoretically weighted density of the states of graphite and C3N4 structures.File in questo prodotto:
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