The Sn/Si(111)-(3Ã3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)]PRLTAO0031-900710.1103/PhysRevLett.98.086401. © 2007 The American Physical Society.
Insulating Ground State of Sn/Si(111)-(RT3xRT3) R30°
OTTAVIANO, LUCA;
2007-01-01
Abstract
The Sn/Si(111)-(3Ã3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)]PRLTAO0031-900710.1103/PhysRevLett.98.086401. © 2007 The American Physical Society.File in questo prodotto:
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