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EnglishThin films of titanium nitride (TiN) were obtained by annealing Ti films in nitrogen atmosphere for different times. An accurate characterization of their chemical and crystalline nature was performed using X-ray photoelectron spectroscopy (XPS) depth profiling and X-ray diffraction (XRD) measurements. The XPS results show a deeper penetration of the nitrogen into the titanium layer as the forming time increases and a non-stoichiometric composition of the TiN layer when the nitridation time of the titanium him at 585 degrees C is below 100 min. The XRD data of these samples indicate the presence of a mixture of different crystalline phases.
| Titolo: | Study by X-ray photoelectron spectroscopy and X-ray diffraction of the growth of TiN thin films obtained by nitridation of Ti layers | |
| Autori: | ||
| Data di pubblicazione: | 1996 | |
| Rivista: | ||
| Abstract: | Thin films of titanium nitride (TiN) were obtained by annealing Ti films in nitrogen atmosphere for different times. An accurate characterization of their chemical and crystalline nature was performed using X-ray photoelectron spectroscopy (XPS) depth profiling and X-ray diffraction (XRD) measurements. The XPS results show a deeper penetration of the nitrogen into the titanium layer as the forming time increases and a non-stoichiometric composition of the TiN layer when the nitridation time of the titanium him at 585 degrees C is below 100 min. The XRD data of these samples indicate the presence of a mixture of different crystalline phases. | |
| Handle: | http://hdl.handle.net/11697/8490 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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