Currently there are intense industry-wide efforts in searching for new high dielectric constant (high-k) materials for use in future generations of ultra-large scale integrated circuits (ULSI). There are number of requirements for the new high-k materials, such as high dielectric constant, thermal stability (400 degrees C or higher), high mechanical strength, and good adhesion to neighboring layers. Oxide spinels comprise a very large group of structurally related compounds many of which are of considerable technological significance. Spinels exhibit a wide range of electronic and magnetic properties in particular nickel, hafnium, cobalt, containing spinels. In the present investigation, crack free, dense polycrystalline monoclinic structure of pure HfO2, and Al2HfO5 ultra-thin films have been prepared by a simple and cost effective sol-gel spin coating method. The formation of the monoclinic HfO2 phase at 600 degrees C and complete formation of the single phase Al2HfO5 at 800 degrees C has been reported. The composition of the annealed films has been measured and found to be 70 at.% of O, 30 at.% of Hf for HfO2 and 22 at.% of Al, 12 at.% of Hf and 66 at.% of O for Al2HfO5 films, which are close to the stoichiometry of the HfO2 and Al2HfO5 thin films. (c) 2007 Elsevier B.V. All rights reserved.

Synthesis and characterization of hafnium oxide and hafnium aluminate ultra-thin films by a sol-gel spin coating process for microelectronic applications

PASSACANTANDO, MAURIZIO;SANTUCCI, Sandro
2007

Abstract

Currently there are intense industry-wide efforts in searching for new high dielectric constant (high-k) materials for use in future generations of ultra-large scale integrated circuits (ULSI). There are number of requirements for the new high-k materials, such as high dielectric constant, thermal stability (400 degrees C or higher), high mechanical strength, and good adhesion to neighboring layers. Oxide spinels comprise a very large group of structurally related compounds many of which are of considerable technological significance. Spinels exhibit a wide range of electronic and magnetic properties in particular nickel, hafnium, cobalt, containing spinels. In the present investigation, crack free, dense polycrystalline monoclinic structure of pure HfO2, and Al2HfO5 ultra-thin films have been prepared by a simple and cost effective sol-gel spin coating method. The formation of the monoclinic HfO2 phase at 600 degrees C and complete formation of the single phase Al2HfO5 at 800 degrees C has been reported. The composition of the annealed films has been measured and found to be 70 at.% of O, 30 at.% of Hf for HfO2 and 22 at.% of Al, 12 at.% of Hf and 66 at.% of O for Al2HfO5 films, which are close to the stoichiometry of the HfO2 and Al2HfO5 thin films. (c) 2007 Elsevier B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/8569
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