"The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction. barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100V. The spectral. behavior reflects the silicon spectral range with a maximum at about 880 nm."

Progress in the realization of a silicon-CNT photodetector

PASSACANTANDO, MAURIZIO;
2012-01-01

Abstract

"The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction. barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100V. The spectral. behavior reflects the silicon spectral range with a maximum at about 880 nm."
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/89449
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