In this paper we present a physically relevant hydrodynamic model for a bipolar semiconductor device considering Ohmic conductor boundary conditions and a non-. at doping pro\fle. For such an Euler-Poisson system, we prove, by means of a technical energy method, that the solutions are unique, exist globally and asymptotically converge to the corresponding stationary solutions. An exponential decay rate is also derived. Moreover we allow that the two pressure functions can be different.
Asymptotic behavior of solutions to the bipolar hydrodynamic model of semiconductors in bounded domain
SAMPALMIERI, ROSELLA COLOMBA;RUBINO, BRUNO
2012-01-01
Abstract
In this paper we present a physically relevant hydrodynamic model for a bipolar semiconductor device considering Ohmic conductor boundary conditions and a non-. at doping pro\fle. For such an Euler-Poisson system, we prove, by means of a technical energy method, that the solutions are unique, exist globally and asymptotically converge to the corresponding stationary solutions. An exponential decay rate is also derived. Moreover we allow that the two pressure functions can be different.File in questo prodotto:
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