Germanium, have been synthesized using chemical vapor deposition with Au nanoparticles (with size ranging from 5 nm to 30 nm) as nucleating centers (catalysts) and Germanium powders as a source for the nanowires growth. Au nanoparticles were synthesized on Si (100) by using simple and cost effective sol-gel process from HAuCl4 as a precursor. The monodisperse, molecular-scale, single-crystal Ge nanowires with diameters as small as 15 nm have been grown in a controllable manner. X-ray diffraction and high resolution scanning electron microscopy and X-ray photoelectron spectroscopy have been employed to characterize for their structural, morphological, and compositional properties. These nanowires are opening up unique opportunities for fundamental physics and high-performance devices also the nanowires could be used to create electronic devices for small, ultra fast computers and memories.

Growth of Ge nanowires by chemical vapour deposition technique

GROSSI, VALENTINA;PASSACANTANDO, MAURIZIO;OTTAVIANO, LUCA;SANTUCCI, Sandro
2006-01-01

Abstract

Germanium, have been synthesized using chemical vapor deposition with Au nanoparticles (with size ranging from 5 nm to 30 nm) as nucleating centers (catalysts) and Germanium powders as a source for the nanowires growth. Au nanoparticles were synthesized on Si (100) by using simple and cost effective sol-gel process from HAuCl4 as a precursor. The monodisperse, molecular-scale, single-crystal Ge nanowires with diameters as small as 15 nm have been grown in a controllable manner. X-ray diffraction and high resolution scanning electron microscopy and X-ray photoelectron spectroscopy have been employed to characterize for their structural, morphological, and compositional properties. These nanowires are opening up unique opportunities for fundamental physics and high-performance devices also the nanowires could be used to create electronic devices for small, ultra fast computers and memories.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/95230
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