Multiwall carbon nanotubes (MWCNTs) consist of multiple layers of graphite sheets arranged in con- centric cylinders, from two to many tens. These systems are closely related to graphite layers but in some features, MWCNTs behave quite differently from graphite. In particular, their ability to generate a pho- tocurrent in a wide wavelength range has been demonstrated either without or with the application of a draining voltage. In addition, the photocurrent signal has been found to reproduce the optical absorbance of MWCNTs, showing a maximum in the near UV region. In this paper main characteristics of a novel large area photodetector featuring low noise, high lin- earity and efficiency are reported. This detector has been obtained by coupling the optoelectronic characteristics of MWCNTs with the well-known properties of silicon. MWCNTs are growth on n-doped silicon layer by chemical vapour deposition creating a p–n heterojunction with high sensitivity to the radiation from UV to IR. An additional MIS junction is obtained with a metallic conductive layer de- posited on the back of silicon substrate. Moreover, first results on the signals generated by pulsed laser are also reported.

Large area CNT-Si heterojunction for photodetection

PASSACANTANDO, MAURIZIO;
2017-01-01

Abstract

Multiwall carbon nanotubes (MWCNTs) consist of multiple layers of graphite sheets arranged in con- centric cylinders, from two to many tens. These systems are closely related to graphite layers but in some features, MWCNTs behave quite differently from graphite. In particular, their ability to generate a pho- tocurrent in a wide wavelength range has been demonstrated either without or with the application of a draining voltage. In addition, the photocurrent signal has been found to reproduce the optical absorbance of MWCNTs, showing a maximum in the near UV region. In this paper main characteristics of a novel large area photodetector featuring low noise, high lin- earity and efficiency are reported. This detector has been obtained by coupling the optoelectronic characteristics of MWCNTs with the well-known properties of silicon. MWCNTs are growth on n-doped silicon layer by chemical vapour deposition creating a p–n heterojunction with high sensitivity to the radiation from UV to IR. An additional MIS junction is obtained with a metallic conductive layer de- posited on the back of silicon substrate. Moreover, first results on the signals generated by pulsed laser are also reported.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11697/99986
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