IRIS

BISTI, FEDERICO

BISTI, FEDERICO  

Dipartimento di Scienze fisiche e chimiche  

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Risultati 1 - 20 di 50 (tempo di esecuzione: 0.032 secondi).
Titolo Data di pubblicazione Autore(i) File
Doping the Spin-Polarized Graphene Minicone on Ni(111) 1-gen-2024 Tresca, Cesare; Profeta, Gianni; Bisti, Federico
Direct observation of highly anisotropic electronic and optical nature in indium telluride 1-gen-2023 Kremer, G.; Mahmoudi, A.; Bouaziz, M.; Brochard-Richard, C.; Khalil, L.; Pierucci, D.; Bertran, F.; Le Fevre, P.; Silly, M. G.; Chaste, J.; Oehler, F.; Pala, M.; Bisti, F.; Ouerghi, A.
On the Suitable Choice of Metal for HgTe Nanocrystal-Based Photodiode: To Amalgam or Not to Amalgam 1-gen-2023 Alchaar, R.; Dabard, C.; Mastrippolito, D.; Bossavit, E.; Dang, T. H.; Cavallo, M.; Khalili, A.; Zhang, H.; Domenach, L.; Ledos, N.; Prado, Y.; Troadec, D.; Dai, J.; Tallarida, M.; Bisti, F.; Cadiz, F.; Patriarche, G.; Avila, J.; Lhuillier, E.; Pierucci, D.
Ferroelectricity modulates polaronic coupling at multiferroic interfaces 1-gen-2022 Husanu, M. A.; Popescu, D. G.; Bisti, F.; Hrib, L. M.; Filip, L. D.; Pasuk, I.; Negrea, R.; Istrate, M. C.; Lev, L.; Schmitt, T.; Pintilie, L.; Mishchenko, A.; Teodorescu, C. M.; Strocov, V. N.
The ALBA high-stability monochromator for VUV and soft X-rays 1-gen-2022 Crisol, A; Ribó, L; Quispe, M; Nikitina, L; Monge, R; Llonch, M; Molas, B; Tallarida, M; Bisti, F; Colldelram, C; Nicolas, J
α-As2Te3 as a platform for the exploration of the electronic band structure of single layer β-tellurene 1-gen-2022 Khalil, L.; Forcella, P. M.; Kremer, G.; Bisti, F.; Chaste, J.; Girard, J. -C.; Oehler, F.; Pala, M.; Dayen, J. -F.; Logoteta, D.; Goerbig, M.; Bertran, F.; Le Fevre, P.; Lhuillier, E.; Rault, J.; Pierucci, D.; Profeta, G.; Ouerghi, A.
Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy 1-gen-2022 Zribi, Jihene; Pierucci, Debora; Bisti, Federico; Zheng, Biyuan; Avila, José; Khalil, Lama; Ernandes, Cyrine; Chaste, Julien; Oehler, Fabrice; Pala, Marco; Maroutian, Thomas; Hermes, Ilka; Lhuillier, Emmanuel; Pan, Anlian; Ouerghi, Abdelkarim
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy 1-gen-2022 Pierucci, D.; Mahmoudi, A.; Silly, M.; Bisti, F.; Oehler, F.; Patriarche, G.; Bonell, F.; Marty, A.; Vergnaud, C.; Jamet, M.; Boukari, H.; Lhuillier, E.; Pala, M.; Ouerghi, A.
Clarifying the apparent flattening of the graphene band near the van Hove singularity 1-gen-2022 Jugovac, Matteo; Tresca, Cesare; Cojocariu, Iulia; Di Santo, Giovanni; Zhao, Wenjuan; Petaccia, Luca; Moras, Paolo; Profeta, Gianni; Bisti, Federico
Dispositivo de refrigeración para elementos ópticos en entornos de ultra alto vacío 1-gen-2021 Crisol, Alejandro; Bisti, Federico; Ribó, Llibert; Nicolàs, Josep; Colldelram, Carles; Tallarida, Massimo
Electronic band gap of van der Waals α-As2Te3 crystals 1-gen-2021 Khalil, L.; Girard, J. -C.; Pierucci, D.; Bisti, F.; Chaste, J.; Oehler, F.; Greboval, C.; Noumbe, U. N.; Dayen, J. -F.; Logoteta, D.; Patriarche, G.; Rault, J.; Pala, M.; Lhuillier, E.; Ouerghi, A.
Electron-phonon coupling origin of the graphene π∗ -band kink via isotope effect 1-gen-2021 Bisti, F.; Priante, F.; Fedorov, A. V.; Donarelli, M.; Fantasia, M.; Petaccia, L.; Frank, O.; Kalbac, M.; Profeta, G.; Gruneis, A.; Ottaviano, L.
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys 1-gen-2021 Ernandes, C.; Khalil, L.; Almabrouk, H.; Pierucci, D.; Zheng, B.; Avila, J.; Dudin, P.; Chaste, J.; Oehler, F.; Pala, M.; Bisti, F.; Brule, T.; Lhuillier, E.; Pan, A.; Ouerghi, A.
The relevance of ARPES to high-T c superconductivity in cuprates 1-gen-2020 Yu, T.; Matt, C. E.; Bisti, F.; Wang, X.; Schmitt, T.; Chang, J.; Eisaki, H.; Feng, D.; Strocov, V. N.
Electron-polaron dichotomy of charge carriers in perovskite oxides 1-gen-2020 Husanu, Ma; Vistoli, L; Verdi, C; Sander, A; Garcia, V; Rault, J; Bisti, F; Lev, Ll; Schmitt, T; Giustino, F; Mishchenko, As; Bibes, M; Strocov, Vn
Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals 1-gen-2019 Henck, H; Pierucci, D; Zribi, J; Bisti, F; Papalazarou, E; Girard, Jc; Chaste, J; Bertran, F; Le Fevre, P; Sirotti, F; Perfetti, L; Giorgetti, C; Shukla, A; Rault, Je; Ouerghi, A
Electronic phase separation at LaAlO3/SrTiO3 interfaces tunable by oxygen deficiency 1-gen-2019 Strocov, Vn; Chikina, A; Caputo, M; Husanu, Ma; Bisti, F; Bracher, D; Schmitt, T; Granozio, Fm; Vaz, Caf; Lechermann, F
Depth-resolved charge reconstruction at the LaNiO3/CaMnO3 interface 1-gen-2018 Chandrasena, Ru; Flint, Cl; Yang, W; Arab, A; Namsak, S; Gehlmann, M; Ozdol, Vb; Bisti, F; Wijesekara, Kd; Meyer-Ilse, J; Gullikson, E; Arenholz, E; Ciston, J; Schneider, Cm; Strocov, Vn; Suzuki, Y; Gray, Ax
Band Dependent Interlayer f-Electron Hybridization in CeRhIn5 1-gen-2018 Chen, Qy; Xu, Df; Niu, Xh; Peng, R; Xu, Hc; Wen, Chp; Liu, X; Shu, L; Tan, Sy; Lai, Xc; Zhang, Yj; Lee, H; Strocov, Vn; Bisti, F; Dudin, P; Zhu, Jx; Yuan, Hq; Kirchner, S; Feng, Dl
Distinct Evolutions of Weyl Fermion Quasiparticles and Fermi Arcs with Bulk Band Topology in Weyl Semimetals 1-gen-2017 Xu, N; Autes, G; Matt, Ce; Lv, Bq; Yao, My; Bisti, F; Strocov, Vn; Gawryluk, D; Pomjakushina, E; Conder, K; Plumb, Nc; Radovic, M; Qian, T; Yazyev, Ov; Mesot, J; Ding, H; Shi, M