The electronic structure of the SiO2/SiC (0001) interface, buried below SiO2 layers with a thickness from 2 to 4 nm, was explored using soft X-ray angle-resolved photoemission spectroscopy with photon energies between 350 and 1000 eV. The measurements have detected the characteristic k-dispersive energy bands of bulk Silicon Carbide (SiC) below the SiO2 layer without any sign of additional dispersive states, up to an estimated instrumental sensitivity of approximate to 5 x 10(9) cm 2 eV. This experimental result supports the physical picture that the large density of interface traps observed in macroscopic measurements results from dangling bonds randomized by the SiO2 rather than from Shockley-Tamm surface derived states extending into the bulk SiC. Published by AIP Publishing.

Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES

Bisti F;
2017

Abstract

The electronic structure of the SiO2/SiC (0001) interface, buried below SiO2 layers with a thickness from 2 to 4 nm, was explored using soft X-ray angle-resolved photoemission spectroscopy with photon energies between 350 and 1000 eV. The measurements have detected the characteristic k-dispersive energy bands of bulk Silicon Carbide (SiC) below the SiO2 layer without any sign of additional dispersive states, up to an estimated instrumental sensitivity of approximate to 5 x 10(9) cm 2 eV. This experimental result supports the physical picture that the large density of interface traps observed in macroscopic measurements results from dangling bonds randomized by the SiO2 rather than from Shockley-Tamm surface derived states extending into the bulk SiC. Published by AIP Publishing.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11697/162566
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