The paper deals with the time domain modeling of the hysteretic behavior of the coupling capacitance from a through silicon via (TSV). The model is developed in such a way that it can be implemented into standard circuit simulators. Results showing the effect of the hysteresis on the electrical performances of the signal channel containing the TSV are shown and discussed.
Through Silicon Via Time Domain Crosstalk Modeling Considering Hysteretic Coupling Capacitance
Piersanti, Stefano;de Paulis, Francesco;Orlandi, Antonio;
2015-01-01
Abstract
The paper deals with the time domain modeling of the hysteretic behavior of the coupling capacitance from a through silicon via (TSV). The model is developed in such a way that it can be implemented into standard circuit simulators. Results showing the effect of the hysteresis on the electrical performances of the signal channel containing the TSV are shown and discussed.File in questo prodotto:
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