Large Area Extreme-UV Lithography of Graphene Oxide via Spatially Resolved Photoreduction

"\"The ability to pattern graphene over large areas. with nanometer resolution is the current request for nanodevice. fabrication at the industrial scale. Existing methods do. not match high throughput with nanometer resolution. We. propose a high-throughput resistless extreme-UV (EUV). photolithographic approach operating with sub-micrometer. resolution on large area (∼10 mm2) graphene oxide (GO). films via spatially resolved photoreduction. The efficiency of. EUV photoreduction is tested with 46.9 nm coherent light produced by a table top capillary discharge plasma source. Irradiated. samples are studied by X-ray photoemission spectroscopy (XPS) and micro-Raman Spectroscopy (μRS). XPS data show that 200. mJ\\\/cm2 EUV dose produces, onto pristine GO, a 6% increase of sp2 carbon bonds and a 20% decrease of C−O bonds. μRS data. demonstrate a photoreduction efficiency 2 orders of magnitude higher than the one reported in the literature for UV-assisted. photoreduction. GO patterning is obtained modulating the EUV dose with a Lloyd’s interferometer. The lithographic features. consist of GO stripes with modulated reduction degree. Such modulation is investigated and demonstrated by μRS on patterns. with 2 μm periodicity.. \""