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Titolo Data di pubblicazione Autore(i) File
All-electron study of the electronic properties of quartz with Al substitutional impurity 1-gen-1996 Continenza, Alessandra; Dipomponio, A.
Electronic structure and Yb-valence in the Kondo lattices YbCu(4)M (M=Ag, Au, Pd, In) 1-gen-1996 Continenza, Alessandra; Monachesi, Patrizia; Galli, M; Marabelli, F; Bauer, E.
Theoretical interpretation of optical conductivity of YbCu4Ag,Au 1-gen-1996 Continenza, Alessandra; Monachesi, Patrizia; Galli, M; Marabelli, F; Bauer, E.
Structural and electronic properties of GaSb/InSb and InAs/InSb superlattices 1-gen-1997 Picozzi, S; Continenza, Alessandra; Freeman, A. J.
Quasiparticle energy bands of transition-metal oxides within a model GW scheme 1-gen-1997 Massidda, S; Continenza, Alessandra; Posternak, M; Baldereschi, A.
Size-induced phase transition (zincblende to wurtzite) in CdSSe nanocrystallites embedded in glass 1-gen-1997 Giugno, Pv; Vasanelli, L; Cingolani, R; Continenza, Alessandra; Baru, Vg; Chernushich, A; Jitov, V; Luzanov, V.
Electronic structure of divalent hexaborides 1-gen-1997 Massidda, S; Continenza, Alessandra; Depascale, Tm; Monnier, R.
Highly tunable valence-band offset at the (111)Si/Si homojunction via a CaF monolayer saturated with H 1-gen-1997 Picozzi, S; Massidda, S; Continenza, Alessandra; Resta, R.
Self-energy corrections in transition metal oxides 1-gen-1997 Massidda, S; Continenza, Alessandra; Posternak, M; Baldereschi, A.
Electric fields and valence-band offsets at strained [111] heterojunctions 1-gen-1997 Picozzi, S; Continenza, Alessandra; Freeman, Aj
Structural and electronic properties of ideal nitride/Al interfaces 1-gen-1998 Picozzi, S; Continenza, Alessandra; Massidda, S; Freeman, Aj
An experimental and theoretical analysis of Cu/Ag chalcopyrites 1-gen-1998 de Pascale, Tm; Meloni, F; Serra, M; Continenza, Alessandra; Shaukat, A; Burzlaff, H; Spengler, R.
Influence of the exchange reaction on the electronic structure of GaN/Al junctions 1-gen-1998 Picozzi, S; Continenza, Alessandra; Massidda, S; Freeman, Aj; Newman, N.
Electronic structure and magnetic properties of URhSi 1-gen-1998 Galli, M; Marabelli, F; Continenza, Alessandra; Monachesi, Patrizia; Canepa, F; Fornasini, Ml
Structural And Electronic Properties of GaN/AL Interfaces 1-gen-1998 Picozzi, S; Continenza, Alessandra; Massidda, S; Freeman, Aj
Surface states and Fermi-level pinning at clean and Al covered GaN surfaces 1-gen-1999 Picozzi, S; Continenza, Alessandra; Freeman, Aj
Self-energy corrections in VO2 within a model GW scheme 1-gen-1999 Continenza, Alessandra; Massidda, S; Posternak, M.
Structural and electronic properties of the Sn/Si(111)root 3x root 3R30 degrees surface 1-gen-2000 Profeta, Gianni; Continenza, Alessandra; Ottaviano, L; Mannstadt, W; Freeman, Aj
Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface: a voltage-dependent scanning tunneling microscopy study 1-gen-2000 Ottaviano, L; Profeta, Gianni; Continenza, Alessandra; Santucci, Sandro; Freeman, Aj; Modesti, S.
Crystal and electronic structures of superconducting YSr2Cu3O6+x 1-gen-2000 Gauzzi, A; Gilioli, E; Licci, F; Marezio, M; Massidda, S; Bernardini, F; Continenza, Alessandra; Radaelli, Pg
Mostrati risultati da 41 a 60 di 175
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